Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
US8946091B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946091-B2 |
| Application number | US-201113096697-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 28, 2011 |
| Priority date | Apr 28, 2011 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A method for etching features in an etch layer is provided. An organic mask layer is etched, using a hard mask as an etch mask. The hard mask is removed, by selectively etching the hard mask with respect to the organic mask and etch layer. Features are etched in the etch layer, using the organic mask as an etch mask.
Opening claim text (preview).
What is claimed is: 1. A method for etching features in an etch layer, comprising: etching an organic mask layer, using a hard mask as an etch mask; completely removing the hard mask, by selectively etching the hard mask with respect to the organic mask and etch layer; etching features in the etch layer, using the organic mask as an etch mask, wherein the hard mask defines wider lines and narrower lines adjacent to the wider lines, and wherein the removing the hard mask redu…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Related publications grouped by family.
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Answers are generated from the same data shown on this page.