Prevention of line bending and tilting for etch with tri-layer mask

US8946091B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8946091-B2
Application numberUS-201113096697-A
CountryUS
Kind codeB2
Filing dateApr 28, 2011
Priority dateApr 28, 2011
Publication dateFeb 3, 2015
Grant dateFeb 3, 2015

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Abstract

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A method for etching features in an etch layer is provided. An organic mask layer is etched, using a hard mask as an etch mask. The hard mask is removed, by selectively etching the hard mask with respect to the organic mask and etch layer. Features are etched in the etch layer, using the organic mask as an etch mask.

First claim

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What is claimed is: 1. A method for etching features in an etch layer, comprising: etching an organic mask layer, using a hard mask as an etch mask; completely removing the hard mask, by selectively etching the hard mask with respect to the organic mask and etch layer; etching features in the etch layer, using the organic mask as an etch mask, wherein the hard mask defines wider lines and narrower lines adjacent to the wider lines, and wherein the removing the hard mask redu…

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What does patent US8946091B2 cover?
A method for etching features in an etch layer is provided. An organic mask layer is etched, using a hard mask as an etch mask. The hard mask is removed, by selectively etching the hard mask with respect to the organic mask and etch layer. Features are etched in the etch layer, using the organic mask as an etch mask.
Who is the assignee on this patent?
Oh Youn-Jin, Takeshita Kenji, Takahashi Hitoshi, and 1 more
What technology area does this patent fall under?
Primary CPC classification H10P50/73. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).