Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
Methods of forming contact holes
US8946089B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946089-B2 |
| Application number | US-201314108869-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 17, 2013 |
| Priority date | Jan 7, 2013 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
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Methods of forming contact holes include forming a first guide pattern over an etching target layer. The first guide pattern has first openings each extending in a first direction and each first opening arranged in a direction perpendicular to the first direction. A first BCP structure is formed in each first opening. The first BCP structure includes first material layers in the first direction at a first pitch in each of the first openings, and second material layers filling a remaining portion of each first opening. First holes are formed by removing the first material layers. A second guide pattern is formed over the first guide pattern and the second material layers, and the above processes are performed on the second guide pattern to form second holes. Portions of the etching target layer overlapped by the first holes or the second holes are removed to form a desired pattern.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming contact holes, the method comprising: forming a first guide pattern over an etching target layer, the first guide pattern having a plurality of first openings each extending in a first direction and the first openings arranged in a second direction substantially perpendicular to the first direction; forming a first block copolymer (BCP) structure in each of the first openings, the first BCP structure including, a plurality of first mat…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P50/73Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8946089B2 cover?
- Methods of forming contact holes include forming a first guide pattern over an etching target layer. The first guide pattern has first openings each extending in a first direction and each first opening arranged in a direction perpendicular to the first direction. A first BCP structure is formed in each first opening. The first BCP structure includes first material layers in the first direction…
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P50/73. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).