Methods of manufacturing semiconductor devices
US-2024332030-A1 · Oct 3, 2024 · US
US8946087B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946087-B2 |
| Application number | US-201213364924-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 2, 2012 |
| Priority date | Feb 2, 2012 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Official abstract text for this publication.
A method for providing metal filled features in a layer is provided. A metal seed layer is deposited on tops and bottoms of the features. Metal seed layer on tops of the features and overhangs is removed without removing metal seed layer on bottoms of features. An electroless deposition of metal is provided to fill the features, wherein the electroless deposition first deposits on the metal seed layer on bottoms of the features.
Opening claim text (preview).
What is claimed is: 1. A method for providing metal filled features in a layer comprising: depositing a metal seed layer on tops and bottoms of the features; removing the metal seed layer on tops of the features and overhangs and on at least part of the sidewalls within the features without removing any of the metal seed layer on bottoms of features; and providing an electroless deposition of metal to fill the features, wherein the electroless deposition first deposits on th…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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