Method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-8946071-B2
Application number	US-201214364950-A
Country	US
Kind code	B2
Filing date	Mar 23, 2012
Priority date	Dec 15, 2011
Publication date	Feb 3, 2015
Grant date	Feb 3, 2015

Abstract

The present invention discloses a method for manufacturing a semiconductor device, comprising: forming a gate stacked structure on a substrate; forming a source/drain region and a gate sidewall spacer at both sides of the gate stacked structure; depositing a Nickel-based metal layer at least in the source/drain region; performing a first annealing so that the silicon in the source/drain region reacts with the Nickel-based metal layer to form a Ni-rich phase of metal silicide; performing an ion implantation by implanting doping ions into the Ni-rich phase of metal silicide; performing a second annealing so that the Ni-rich phase metal silicide is transformed into a Nickel-based metal silicide, and meanwhile, forming a segregation region of the doping ions at an interface between the Nickel-based metal silicide and the source/drain region. The method according to the present invention performs the annealing after implanting the doping ions into the Ni-rich phase of metal silicide, thereby improving the solid solubility of the doping ions and forming a segregation region of highly concentrated doping ions, thus the SBH of the metal-semiconductor contact between the Nickel-based metal silica and the source/drain region is effectively reduced, the contact resistance is decreased, and the driving capability of the device is improved.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, comprising:
forming a gate stacked structure on a substrate;
forming a source/drain region and a gate sidewall spacer at both sides of the gate stacked structure;
depositing a Nickel-based metal layer at least in the source/drain region;
performing a first annealing so that the silicon in the source/drain region reacts with the Nickel-based metal layer to form a Ni-rich phase of metal silicide;
perfo…

Assignees

• Luo Jun
• Zhao Chao
• Zhong Huicai
• Li Junfeng
• Chen Dapeng
• Inst Of Microelectronics Cas

Inventors

• Luo Jun
• Zhao Chao
• Zhong Huicai
• Li Junfeng
• Chen Dapeng

Classifications

• H10P32/171

  Electricity · mapped topic

• H10P32/141

  Electricity · mapped topic

• H10D64/0112

  Electricity · mapped topic

• H10D30/0212

  Electricity · mapped topic

• H10D86/01

  Electricity · mapped topic