Fluorine-free interface for semiconductor device performance gain
US-2024145561-A1 · May 2, 2024 · US
US8946059B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946059-B2 |
| Application number | US-60335209-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 21, 2009 |
| Priority date | Oct 15, 2009 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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A method of producing a semiconductor device is provided, the semiconductor device including a substrate, a semiconductor layer and at least one metallization layer adjacent to at least one element chosen from the substrate and the semiconductor layer, the method including forming at least one metallization layer which, adjacent to at least one element chosen from the substrate and the semiconductor layer, includes oxygen.
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The invention claimed is: 1. A method of producing a semiconductor device comprising a substrate, a semiconductor layer, and at least one metallization layer adjacent to at least one element chosen from the substrate and the semiconductor layer, the method comprising: positioning a substrate into a processing chamber having a sputtering target; forming the at least one metallization layer including an oxygen concentration gradient on the substrate by: forming a barrier/adhesion…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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