Package substrate and semiconductor package including the same
US-2024429153-A1 · Dec 26, 2024 · US
Processes for multi-layer devices utilizing layer transfer
US8946052B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946052-B2 |
| Application number | US-201213627425-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 26, 2012 |
| Priority date | Sep 26, 2012 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.
First claim
Opening claim text (preview).
What is claimed is: 1. A method comprising: forming a release layer over a donor substrate; forming a plurality of devices made of a first semiconductor material over the release layer; applying a first dielectric layer over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer; attaching the plurality of devices to it receiving structure made of a second semiconductor material, the receiving structure h…
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Operations & Transport · mapped topic
Operations & Transport · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8946052B2 cover?
- A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving dev…
- Who is the assignee on this patent?
- Sandia Corp
- What technology area does this patent fall under?
- Primary CPC classification H10W90/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).