Gate isolation features and methods of fabricating the same in semiconductor devices
US-2024379673-A1 · Nov 14, 2024 · US
US8946049B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946049-B2 |
| Application number | US-201213444447-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 11, 2012 |
| Priority date | Apr 11, 2012 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Gate structures and methods of manufacturing is disclosed. The method includes forming a continuous replacement gate structure within a trench formed in dielectric material. The method further includes segmenting the continuous replacement gate structure into separate replacement gate structures. The method further includes forming insulator material between the separate replacement gate structures.
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What is claimed: 1. A method, comprising: forming a continuous replacement gate structure within a trench formed in dielectric material; segmenting the continuous replacement gate structure into separate replacement gate structures; and forming insulator material between the separate replacement gate structures, wherein the forming the continuous replacement gate structure comprises: forming a continuous dummy gate structure; forming the dielectric material about the cont…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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