Forming a partially silicided element
US-2024087886-A1 · Mar 14, 2024 · US
Polysilicon resistor formation
US8946039B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946039-B2 |
| Application number | US-201313767930-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 15, 2013 |
| Priority date | Feb 15, 2013 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
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Aspects of the present invention relate to an approach for implanting and forming a polysilicon resistor with a single implant dose. Specifically, a mask having a set of openings is formed over a resistor surface. The set of openings are typically formed in a column-row arrangement according to a predetermined pattern. Forming the mask in this manner allows the resistor surface to have multiple regions/zones. A first region is defined by the set of openings in the mask, and a second region is defined by the remaining portions of the mask. The resistor is then subjected to a single implant dose via the openings. Implanting the resistor in this manner allows the resistor to have multiple resistance values (i.e., a first resistance value in the first region, and a second resistance value in the second region).
First claim
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What is claimed is: 1. A method for forming a resistor, comprising: forming a set of openings in a mask over a resistor surface portion of the resistor, the resister including the resistor surface and a set of RENDs having contact openings and being located on an end portion of the resistor, the set of openings being formed according to a predetermined pattern; and implanting the set of openings with a single implant dose to yield a resistor having multiple resistance values.…
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- What does patent US8946039B2 cover?
- Aspects of the present invention relate to an approach for implanting and forming a polysilicon resistor with a single implant dose. Specifically, a mask having a set of openings is formed over a resistor surface. The set of openings are typically formed in a column-row arrangement according to a predetermined pattern. Forming the mask in this manner allows the resistor surface to have multiple…
- Who is the assignee on this patent?
- Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D1/47. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).