Semiconductor devices having a seal ring
US-2024413245-A1 · Dec 12, 2024 · US
Merged fin finFET with (100) sidewall surfaces and method of making same
US8946033B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946033-B2 |
| Application number | US-201213561352-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 30, 2012 |
| Priority date | Jul 30, 2012 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A merged fin finFET and method of fabrication. The finFET includes: two or more single-crystal semiconductor fins on a top surface of an insulating layer on semiconductor substrate, each fin of the two or more fins having a central region between and abutting first and second end regions and opposite sides, top surfaces and sidewalls of the two or more fins are ( 100 ) surfaces and the longitudinal axes of the two or more fins aligned with a [ 100 ] direction; a gate dielectric layer on each fin of the two or more fins; an electrically conductive gate over the gate dielectric layer over the central region of each fin of the of two or more fins; and a merged source/drain comprising an a continuous layer of epitaxial semiconductor material on ends of each fin of the two or more fins, the ends on a same side of the conductive gate.
First claim
Opening claim text (preview).
What is claimed is: 1. A method, comprising: (a) forming two or more fins on a top surface of an insulating layer on semiconductor substrate, each fin of said two or more fins being a solid rectangular block of single-crystal semiconductor material, each fin of said two or more fins having a central region between and abutting first and second end regions and opposite sides, top surfaces and sidewalls of said two or more fins are (100) surfaces and the longitudinal axes of said tw…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8946033B2 cover?
- A merged fin finFET and method of fabrication. The finFET includes: two or more single-crystal semiconductor fins on a top surface of an insulating layer on semiconductor substrate, each fin of the two or more fins having a central region between and abutting first and second end regions and opposite sides, top surfaces and sidewalls of the two or more fins are ( 100 ) surfaces and the longitud…
- Who is the assignee on this patent?
- Adam Thomas N, Fogel Keith E, Li Jinghong, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10D30/62. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).