Semiconductor device comprising a buried capacitor formed in the contact level

Patent metadata

Field	Value
Publication number	US-8946019-B2
Application number	US-96521210-A
Country	US
Kind code	B2
Filing date	Dec 10, 2010
Priority date	May 31, 2010
Publication date	Feb 3, 2015
Grant date	Feb 3, 2015

Abstract

In a semiconductor device, capacitors may be formed so as to be in direct contact with a transistor by using a shared transistor region, such as a drain region or a source region of closely spaced transistors, as one capacitor electrode, while the other capacitor electrode is provided in the form of a buried electrode in the dielectric material of the contact level. To this end, dielectric material may be deposited so as to reliably form a void, wherein, at any appropriate manufacturing stage, a capacitor dielectric material may be provided so as to separate the capacitor electrodes.

First claim

What is claimed:

1. A method, comprising:
forming a capacitor dielectric material on a first contact region formed in an active region of a semiconductor device;
forming a dielectric material between a first gate electrode structure and a second gate electrode structure so as to provide a void in said dielectric material, said first and second gate electrode structures formed at least on said active region;
forming a first contact opening in said dielectric material so as to c…

Assignees

• Chumakov Dmytro
• Hertzsch Tino
• Globalfoundries Inc

Inventors

• Chumakov Dmytro
• Hertzsch Tino

Classifications

• H10D84/813

  Electricity · mapped topic

• H10W20/496 Primary

  Electricity · mapped topic

• H10D84/811 Primary

  Electricity · mapped topic

• H01L27/0629 Primary

  Electricity · mapped topic

• H01L23/5223

  Electricity · mapped topic