Method of making a TFT charge storage memory cell having high-mobility corrugated channel

US8946017B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8946017-B2
Application numberUS-201213351456-A
CountryUS
Kind codeB2
Filing dateJan 17, 2012
Priority dateJun 1, 2005
Publication dateFeb 3, 2015
Grant dateFeb 3, 2015

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Abstract

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Numerous other aspects are provided a method for making a nonvolatile memory cell. The method includes forming a non-planar dielectric structure, and conformally depositing a semiconductor layer over the dielectric structure. A portion of the semiconductor layer serves as a channel region for a transistor, and the channel region is non-planar in shape.

First claim

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The invention claimed is: 1. A method for forming a monolithic three dimensional memory array, the method comprising: forming a first plurality of substantially parallel, substantially coplanar rail-shaped dielectric features extending in a first direction; conformally depositing a first semiconductor layer over the first rail-shaped dielectric features, wherein the deposited first semiconductor layer has a corrugated shape; conformally forming a first charge storage stack ove…

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What does patent US8946017B2 cover?
Numerous other aspects are provided a method for making a nonvolatile memory cell. The method includes forming a non-planar dielectric structure, and conformally depositing a semiconductor layer over the dielectric structure. A portion of the semiconductor layer serves as a channel region for a transistor, and the channel region is non-planar in shape.
Who is the assignee on this patent?
Scheuerlein Roy E, Sandisk 3D Llc
What technology area does this patent fall under?
Primary CPC classification H10D30/6893. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).