Inverted thin channel mosfet with self-aligned expanded source/drain

Patent metadata

Field	Value
Publication number	US-8946007-B2
Application number	US-201313762044-A
Country	US
Kind code	B2
Filing date	Feb 7, 2013
Priority date	May 10, 2012
Publication date	Feb 3, 2015
Grant date	Feb 3, 2015

Abstract

After formation of a gate electrode, a source trench and a drain trench are formed down to an upper portion of a bottom semiconductor layer having a first semiconductor material of a semiconductor-on-insulator (SOI) substrate. The source trench and the drain trench are filled with at least a second semiconductor material that is different from the first semiconductor material to form source and drain regions. A planarized dielectric layer is formed and a handle substrate is attached over the source and drain regions. The bottom semiconductor layer is removed selective to the second semiconductor material, the buried insulator layer, and a shallow trench isolation structure. The removal of the bottom semiconductor layer exposes a horizontal surface of the buried insulator layer present between source and drain regions on which a conductive material layer is formed as a back gate electrode.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor structure comprising:
forming a gate stack comprising a gate dielectric, a gate electrode, and a gate cap dielectric on a top semiconductor layer of a semiconductor-on-insulator (SOI) substrate, said SOI substrate further comprising a bottom semiconductor layer having a first semiconductor material and a buried insulator layer;
forming a source trench and a drain trench through said top semiconductor layer, said bu…

Assignees

• IBM

Inventors

• Doris Bruce B
• Cheng Kangguo
• Khakifirooz Ali
• La Tulipe Jr Douglas C

Classifications

• H10W20/0234

  Electricity · mapped topic

• H10W20/481

  Electricity · mapped topic

• H10W20/0242

  Electricity · mapped topic

• H10W20/218

  Electricity · mapped topic

• H10W20/40

  Electricity · mapped topic