Replacement gate MOSFET with raised source and drain

Patent metadata

Field	Value
Publication number	US-8946006-B2
Application number	US-91392210-A
Country	US
Kind code	B2
Filing date	Oct 28, 2010
Priority date	Oct 28, 2010
Publication date	Feb 3, 2015
Grant date	Feb 3, 2015

Abstract

A disposable dielectric spacer is formed on sidewalls of a disposable material stack. Raised source/drain regions are formed on planar source/drain regions by selective epitaxy. The disposable dielectric spacer is removed to expose portions of a semiconductor layer between the disposable material stack and the source/drain regions including the raised source/drain regions. Dopant ions are implanted to form source/drain extension regions in the exposed portions of the semiconductor layer. A gate-level dielectric layer is deposited and planarized. The disposable material stack is removed and a gate stack including a gate dielectric and a gate electrode fill a cavity formed by removal of the disposable material stack. Optionally, an inner dielectric spacer may be formed on sidewalls of the gate-level dielectric layer within the cavity prior to formation of the gate stack to tailor a gate length of a field effect transistor.

First claim

What is claimed is:

1. A method of forming a semiconductor structure comprising:
forming a disposable material stack on a semiconductor substrate;
forming a single unitary disposable dielectric spacer on sidewalls of said disposable material stack, wherein a base of the single unitary disposable dielectric spacer is in direct contact with the semiconductor substrate, and wherein said single unitary disposable dielectric spacer is composed of a single material;
forming planar s…

Assignees

• Ponoth Shom
• Horak David V
• Yang Chih-Chao
• IBM

Inventors

• Ponoth Shom
• Horak David V
• Yang Chih-Chao

Classifications

• H10D30/608

  Electricity · mapped topic

• H10D64/018

  Electricity · mapped topic

• H10D64/017 Primary

  Electricity · mapped topic

• H10D30/0275

  Electricity · mapped topic

• H10D30/60 Primary

  Electricity · mapped topic