Compositions for solution process, electronic devices fabricated using the same, and fabrication methods thereof
US-2015372148-A1 · Dec 24, 2015 · US
Alkali metal-doped solution-processed metal chalcogenides
US8945980B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8945980-B2 |
| Application number | US-201313773283-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 21, 2013 |
| Priority date | Dec 11, 2012 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
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A method is provided for forming an alkali metal-doped solution-processed metal chalcogenide. A first solution is formed that includes a first material group of metal salts, metal complexes, or combinations thereof, dissolved in a solvent. The first material group may include one or more of the following elements: copper (Cu), indium (In), and gallium (Ga). An alkali metal-containing material is added to the first solution, and the first solution is deposited on a conductive substrate. The alkali metal-containing material may be sodium (Na). An alkali metal-doped first intermediate film results, comprising metal precursors from corresponding members of the first material group. Then, thermally annealing is performed in an environment of selenium (Se), Se and hydrogen (H 2 ), hydrogen selenide (H 2 Se), sulfur (S), S and H 2 , hydrogen sulfide (H 2 S), or combinations thereof. The metal precursors in the alkali metal-doped first intermediate film are transformed, and an alkali metal-doped chalcogenide layer is formed.
First claim
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We claim: 1. A method for forming an alkali metal-doped solution-processed metal chalcogenide, the method comprising: providing a conductive substrate; forming a first solution including a first material group selected from a first material set consisting of metal salts, metal complexes, and combinations thereof, dissolved in a solvent; adding an alkali metal-containing material to the first solution; depositing the first solution on the conductive substrate; forming an al…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P14/265Primary
Electricity · mapped topic
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- What does patent US8945980B2 cover?
- A method is provided for forming an alkali metal-doped solution-processed metal chalcogenide. A first solution is formed that includes a first material group of metal salts, metal complexes, or combinations thereof, dissolved in a solvent. The first material group may include one or more of the following elements: copper (Cu), indium (In), and gallium (Ga). An alkali metal-containing material i…
- Who is the assignee on this patent?
- Sharp Lab Of America Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P14/265. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).