Photovoltaic devices including nitrogen-containing metal contact
US-2015380601-A1 · Dec 31, 2015 · US
US8945978B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8945978-B2 |
| Application number | US-201313931520-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 28, 2013 |
| Priority date | Jun 28, 2013 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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A metal contact of a solar cell is formed by electroplating copper using an electroplating seed that is formed on a dielectric layer. The electroplating seed includes an aluminum layer that connects to a diffusion region of the solar cell through a contact hole in the dielectric layer. A nickel layer is formed on the aluminum layer, with the nickel layer-aluminum layer stack forming the electroplating seed. The copper is electroplated in a copper plating bath that has methanesulfonic acid instead of sulfuric acid as the supporting electrolyte.
Opening claim text (preview).
What is claimed is: 1. A method of fabricating a solar cell, the method comprising: forming an aluminum layer on a dielectric layer to connect to a diffusion region of the solar cell through a contact hole in the dielectric layer; forming an electroplating seed, wherein said forming the electroplating seed includes forming a nickel layer on the aluminum layer; and forming a metal contact that connects to the diffusion region of the solar cell, wherein said forming the metal co…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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