Display panel and display device
US-2024169952-A1 · May 23, 2024 · US
Interconnection method for a micro-imaging device
US8945977B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8945977-B2 |
| Application number | US-201314048383-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 8, 2013 |
| Priority date | Oct 10, 2012 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
Official abstract text for this publication.
A method for producing an opto-microelectronic micro-imaging device includes a step of forming a first functional part on the base of a first substrate, a base layer, and first electric connection pad. The first functional part is transferred onto a second substrate. The first substrate is thinned until the base layer is reached. A second functional part is formed on the base layer. One via is connected to the first electric connection pad and through the first functional part. The step of forming the second functional part includes connecting the via with the second electric connection pad.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for producing an opto-microelectronic micro-imaging device comprising: forming a first functional part on the base of a first substrate of a semiconductor on insulator type which comprises a surface layer made of a single-crystal semiconductor and a base layer made of an electrically insulating material laid immediately under the surface layer, with the surface layer and at least a part of the base layer being part of the first functional part…
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Classifications
- G02F1/136213Primary
Physics · mapped topic
Physics · mapped topic
- G02F1/1333Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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- What does patent US8945977B2 cover?
- A method for producing an opto-microelectronic micro-imaging device includes a step of forming a first functional part on the base of a first substrate, a base layer, and first electric connection pad. The first functional part is transferred onto a second substrate. The first substrate is thinned until the base layer is reached. A second functional part is formed on the base layer. One via is …
- Who is the assignee on this patent?
- Commissariat Energie Atomique, Commissariat Energie Atomique
- What technology area does this patent fall under?
- Primary CPC classification G02F1/136213. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).