Light emitting device grown on a relaxed layer

Patent metadata

Field	Value
Publication number	US-8945975-B2
Application number	US-201414178983-A
Country	US
Kind code	B2
Filing date	Feb 12, 2014
Priority date	May 19, 2010
Publication date	Feb 3, 2015
Grant date	Feb 3, 2015

Abstract

In some embodiments of the invention, a device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The second semiconductor layer is disposed between the first semiconductor layer and the third semiconductor layer. The third semiconductor layer is disposed between the second semiconductor layer and the light emitting layer. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the third semiconductor layer is no more than 1%. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the second semiconductor layer is at least 1%. The third semiconductor layer is at least partially relaxed.

First claim

The invention claimed is:

1. A method comprising:
growing a first III-nitride semiconductor layer over a growth substrate;
growing a second semiconductor layer;
growing a third semiconductor layer; and
growing a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region; wherein
the second semiconductor layer is disposed between the first semiconductor layer and the third semiconductor layer;
the third semic…

Assignees

• Koninkl Philips Nv
• Philips Lumileds Lighting Co

Inventors

• Kim Andrew Y
• Grillot Patrick N

Classifications

• H10P14/3251

  Electricity · mapped topic

• H10P14/3216

  Electricity · mapped topic

• H10H20/825

  Electricity · mapped topic

• H10H20/815 Primary

  Electricity · mapped topic

• H10H20/018

  Electricity · mapped topic