Semiconductor device including image sensor and method of forming the same
US-2024379711-A1 · Nov 14, 2024 · US
Method of manufacturing backside illuminated active pixel sensor array
US8945973B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8945973-B2 |
| Application number | US-201313950954-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 25, 2013 |
| Priority date | Oct 26, 2010 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
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A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a backside-illuminated active pixel sensor array, the method comprising: (a) forming a semiconductor substrate that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers forming boundaries between pixels by being disposed between the adjacent light-receiving devices, including: forming the light-receivin…
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Classifications
Electricity · mapped topic
- H10F39/011Primary
Electricity · mapped topic
Electricity · mapped topic
- H10F39/8053Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8945973B2 cover?
- A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first c…
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd, Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10F39/011. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).