Compliant micro device transfer head with integrated electrode leads

US8945968B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8945968-B2
Application numberUS-201414312551-A
CountryUS
Kind codeB2
Filing dateJun 23, 2014
Priority dateSep 6, 2012
Publication dateFeb 3, 2015
Grant dateFeb 3, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A compliant micro device transfer head and head array are disclosed. In an embodiment a micro device transfer head includes a spring arm having integrated electrode leads that is deflectable into a space between a base substrate and the spring arm.

First claim

Opening claim text (preview).

What is claimed is: 1. A method, comprising: forming a dielectric layer over a substrate; forming a first electrode layer over the dielectric layer; forming a template on the first electrode layer, wherein the template has a mesa structure; forming a second electrode layer over the template; patterning the second electrode layer and first electrode layer to form a bottom electrode and a top electrode; and removing a portion of the dielectric layer from underneath the bottom electrode to form a spring arm coupled to the substrate by a spring anchor, the spring arm including: the mesa structure, wherein the mesa structure is suspended over the substrate; the top electrode extending laterally from the spring anchor and over the mesa structure; and the bottom electrode extending laterally from the spring anchor underneath the mesa structure and wrapping around and over the mesa structure, wherein the top electrode and the bottom electrode are electrically isolated from each other. 2. The method of claim 1 , wherein patterning the second electrode layer and first electrode layer includes: forming a first negative pattern on the substrate defining a first portion of a bottom electrode; sputtering the first electrode layer over the substrate and the first negative pattern; and removing the first negative pattern along with portions of the first electrode layer formed on the first negative pattern. 3. The method of claim 1 , wherein patterning the second electrode layer and first electrode layer includes: forming a second negative pattern on the template, wherein the second negative pattern defines the top electrode and a second portion of the bottom electrode; forming the second electrode layer over the template and the second negative pattern; and removing the second negative pattern along with portions of the second electrode layer formed over the second negative pattern. 4. The method of claim 1 , wherein patterning the second electrode layer and first electrode layer includes: forming a pattern to define a first portion of the bottom electrode in the first electrode layer; and patterning to remove exposed portions of the first electrode layer to form the first portion of the bottom electrode. 5. The method of claim 1 , wherein patterning the second electrode layer and first electrode layer includes: forming a pattern to define the top electrode and a second portion of the bottom electrode in the second electrode layer; and patterning to remove exposed portions of the second electrode layer to form the second portion of the bottom electrode. 6. The method of claim 1 , wherein removing a portion of the dielectric layer from underneath the bottom electrode comprises laterally etching a portion of the dielectric layer underneath the bottom electrode. 7. The method of claim 1 , wherein the template is formed from an insulating material. 8. The method of claim 1 , wherein the template is formed from photoresist. 9. The method of claim 1 , further comprising removing the template. 10. The method of claim 1 , further comprising forming a second dielectric layer covering the top electrode and the bottom electrode over the mesa structure.

Assignees

Inventors

Classifications

  • Manufacture or treatment · CPC title

  • B81C99/002Primary

    Apparatus for assembling MEMS, e.g. micromanipulators (micromanipulators per se B25J7/00) · CPC title

  • B81C1/0015Primary

    Cantilevers (switches using MEMS H01H1/0036; electrostatic relays using micromechanics H01H59/0009; microelectro-mechanical resonators H03H9/02244) · CPC title

  • Cantilevers · CPC title

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What does patent US8945968B2 cover?
A compliant micro device transfer head and head array are disclosed. In an embodiment a micro device transfer head includes a spring arm having integrated electrode leads that is deflectable into a space between a base substrate and the spring arm.
Who is the assignee on this patent?
Luxvue Technology Corp
What technology area does this patent fall under?
Primary CPC classification B81C99/002. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).