Light Emitting Diode Epitaxial Structure and Light Emitting Diode
US-2024297271-A1 · Sep 5, 2024 · US
Method for producing a group III nitride semiconductor light-emitting device
US8945965B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8945965-B2 |
| Application number | US-201213525110-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 15, 2012 |
| Priority date | Jun 20, 2011 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
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The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved light extraction performance. In the production method, a p cladding layer of p-AlGaN is formed by the MOCVD method on a light-emitting layer at a pressure of 30 kPa and with an Mg concentration of 1.5×10 20 /cm 3 . A plurality of regions with a nitrogen polarity is formed in the crystals with a Group III element polarity, and thus the p cladding layer has a hexagonal columnar concave and convex configuration on the surface thereof. Subsequently, a p contact layer of GaN is formed by the MOCVD method, in a film along the concave and convex configuration on the p cladding layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for producing a Group III nitride semiconductor light-emitting device comprising a p cladding layer and a p contact layer, the method comprising: forming the p cladding layer so as to have a hexagonal columnar concave and convex configuration thereon by reversing a polarity in at least a portion of crystals through crystal growth by Mg doping; and forming the p contact layer along the hexagonal columnar concave and convex configuration on the p cl…
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Electricity · mapped topic
- H10H20/01335Primary
Electricity · mapped topic
- H01L33/007Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8945965B2 cover?
- The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved light extraction performance. In the production method, a p cladding layer of p-AlGaN is formed by the MOCVD method on a light-emitting layer at a pressure of 30 kPa and with an Mg concentration of 1.5×10 20 /cm 3 . A plurality of regions with a nitrogen polarity is formed in the crystals …
- Who is the assignee on this patent?
- Nakada Naoyuki, Ushida Yasuhisa, Toyoda Gosei Kk
- What technology area does this patent fall under?
- Primary CPC classification H10H20/01335. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).