Method of manufacturing EUV photo masks
US-12085843-B2 · Sep 10, 2024 · US
Method of preparing a pattern, method of forming a mask set, device manufacturing method and computer program
US8945800B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8945800-B2 |
| Application number | US-201313965103-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 12, 2013 |
| Priority date | Aug 20, 2012 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
Official abstract text for this publication.
In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method of preparing an exposure pattern for a device manufacturing method using a lithographic apparatus, the method comprising: receiving first data representing a first pattern to be used to define a first layer of a device using the lithographic apparatus; receiving second data representing a second pattern to be used to define a second layer of a device using the lithographic apparatus, the second layer being associated with the first layer;…
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Physics · mapped topic
- G03F1/22Primary
Physics · mapped topic
Physics · mapped topic
- G03F7/70466Primary
Physics · mapped topic
Physics · mapped topic
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- What does patent US8945800B2 cover?
- In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a p…
- Who is the assignee on this patent?
- Asml Netherlands Bv
- What technology area does this patent fall under?
- Primary CPC classification G03F1/22. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).