Resist composition and pattern forming process
US-2024377730-A1 · Nov 14, 2024 · US
Near-field exposure mask and pattern forming method
US8945798B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8945798-B2 |
| Application number | US-201313755188-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 31, 2013 |
| Priority date | Mar 30, 2012 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
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A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.
First claim
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The invention claimed is: 1. A near-field exposure mask comprising: a substrate; a concave-convex structure comprising convexities and concavities formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer comprising at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film sta…
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- What does patent US8945798B2 cover?
- A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consistin…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification G03F7/20. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).