Diamond-like carbon coating on chain guides and tensioning arms for internal combustion engines
US-9476485-B2 · Oct 25, 2016 · US
Method and apparatus for mass-producing DLC films
US8945690B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8945690-B2 |
| Application number | US-38506209-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 30, 2009 |
| Priority date | Mar 31, 2008 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
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A DLC film mass-producing apparatus 10 includes a chamber 12 connected to ground. In the chamber 12 , a plurality of plate-shaped substrates 60 are disposed in parallel at regular intervals, without disposing a counter electrode that faces each of the plate-shaped substrates 60 . Sputtering cleaning is then conducted by plasma discharge and an underlying contact layer is formed on each of the plate-shaped substrates 60 . Subsequently, a DLC film is produced on each of the plate-shaped substrates 60 by injecting a carbon source gas into the chamber 12 such that the internal pressure of the chamber 12 reaches 0.1 to 10 Pa and applying a negative DC pulse voltage having a pulse half width of 0.1 to 3 μsec to each of the plate-shaped substrates 60 to generate plasma.
First claim
Opening claim text (preview).
What is claimed is: 1. A direct current (DC) diamond-like carbon (DLC) film mass-producing method for mass-producing DLC films on a plurality of plate-shaped substrates, comprising the steps of: (a) disposing the plurality of plate-shaped substrates in parallel at regular intervals, wherein the plurality of plate-shaped substrates are electrically connected and are provided without disposing a counter electrode that faces each of the plate-shaped substrates in a chamber connected…
Assignees
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- C23C16/515Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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- What does patent US8945690B2 cover?
- A DLC film mass-producing apparatus 10 includes a chamber 12 connected to ground. In the chamber 12 , a plurality of plate-shaped substrates 60 are disposed in parallel at regular intervals, without disposing a counter electrode that faces each of the plate-shaped substrates 60 . Sputtering cleaning is then conducted by plasma discharge and an underlying contact layer is formed on each …
- Who is the assignee on this patent?
- Saito Takao, Hayakawa Masashi, Ngk Insulators Ltd
- What technology area does this patent fall under?
- Primary CPC classification C23C16/515. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).