Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US8945502B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8945502-B2 |
| Application number | US-42959509-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 24, 2009 |
| Priority date | Apr 30, 2008 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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An electronics component is disclosed herein. The electronics component include a substrate and a plurality of single-walled carbon nanotubes (SWNTs) formed on said substrate, wherein said plurality of SWNTs form a patterned, dense and high-quality arrays of single-walled carbon nanotubes (SWNTs) on quartz wafers by using FeCl 3 /polymer as catalytic precursors and chemical vapor deposition (CVD) of methane. With the assistance of polymer, the catalysts may be well-patterned on the wafer surface by simple photolithography or polydimethylsiloxane (PDMS) stamp microcontact printing (μCP).
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What is claimed: 1. A method for forming a uniform array of single-walled carbon nanotubes (SWNTs) comprising the steps of: forming a layer of photoresist on a substrate, the photoresist comprising catalyst particles of FeCl 3 ; patterning the photoresist into lines on said substrate using photolithography; treating said substrate with O 2 plasma to remove the lines of photoresist and expose lines of catalytic precursor nanoparticles; and exposing said substrate to a chemic…
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