Fluidized bed reactor heater

US8945474B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8945474-B2
Application numberUS-201313841814-A
CountryUS
Kind codeB2
Filing dateMar 15, 2013
Priority dateMar 15, 2013
Publication dateFeb 3, 2015
Grant dateFeb 3, 2015

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

This invention is a heater used to heat the feed process gas from 450° C. to greater than about 600° C. for the fluidized bed reactor (FBR) used for conversion of silicon tetrachloride (STC) to trichlorosilane (TCS). The invention involves stacked heater element carbon plates. The design of the plates allow the plates to act as baffles which improve heat transfer to the feed gas. Also, the heat gradients across each plate is calculated to be approximately 100° C. which is much lower than the gradient seen by conventional vertical heater elements. The design of the present invention prevents electrical grounding. In the design, the elements are surrounded by graphite wrapped in carbon felt to prevent heat loss by radiation and conduction.

First claim

Opening claim text (preview).

What is claimed is: 1. An apparatus for producing trichlorosilane comprising: a reactor; a raw material supply device that supplies metallurgical grade silicon powder as raw material to the reactor; a gas introduction device that introduces a feed gas, comprising at least a hydrogen gas and STC, to the reactor so that the hydrogen gas and STC reacts with the metallurgical grade silicon powder while the metallurgical grade silicon powder is fluidized by the hydrogen gas and STC…

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What does patent US8945474B2 cover?
This invention is a heater used to heat the feed process gas from 450° C. to greater than about 600° C. for the fluidized bed reactor (FBR) used for conversion of silicon tetrachloride (STC) to trichlorosilane (TCS). The invention involves stacked heater element carbon plates. The design of the plates allow the plates to act as baffles which improve heat transfer to the feed gas. Also, the heat…
Who is the assignee on this patent?
Mitsubishi Polycrystalline Silicon America Corp Mipsa, Mitsubishi Materials Corp, Mitsubishi Polycrystaline Silicon America Corp Mipsa
What technology area does this patent fall under?
Primary CPC classification B01J8/1836. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).