High throughput physical vapor deposition system for material combinatorial studies

US8944002B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8944002-B2
Application numberUS-75730204-A
CountryUS
Kind codeB2
Filing dateJan 14, 2004
Priority dateJan 14, 2004
Publication dateFeb 3, 2015
Grant dateFeb 3, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

An infinitely variable physical vapor deposition matrix system that allows the synthesis of multiple combinatorial catalyst samples at essentially the same time, by the co-deposition of multiple materials, or the sequential layer by layer deposition of multiple catalyst constituents, or both, such that the optimum mix of materials for a pre-determined application can be experimentally determined in subsequent testing. The discovery of optimal catalyst combinations for utilization in specified reactions and devices is facilitated. The high throughput system reduces the time and complexity of processing typically required to formulate and test combinatorial catalyst materials.

First claim

Opening claim text (preview).

What is claimed is: 1. A physical vapor deposition system for depositing combinatorial catalyst samples on a plurality of substrate target areas comprising: (a) a deposition chamber that when open, receives one or more substrates and is sealable after the one or more substrates are loaded therein, the chamber being openable after the one or more substrates have been is processed so that the one or more substrates with can be removed therefrom; (b) a plurality of plasma sources r…

Assignees

Inventors

Classifications

  • C23C14/50Primary

    Chemistry & Metallurgy · mapped topic

  • Chemistry & Metallurgy · mapped topic

  • Chemistry & Metallurgy · mapped topic

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US8944002B2 cover?
An infinitely variable physical vapor deposition matrix system that allows the synthesis of multiple combinatorial catalyst samples at essentially the same time, by the co-deposition of multiple materials, or the sequential layer by layer deposition of multiple catalyst constituents, or both, such that the optimum mix of materials for a pre-determined application can be experimentally determine…
Who is the assignee on this patent?
He Ting, Kreidler Eric R, Nomura Tadashi, and 1 more
What technology area does this patent fall under?
Primary CPC classification C23C14/50. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).