Wafer processing apparatus and wafer processing method
US-2024395512-A1 · Nov 28, 2024 · US
US8944002B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8944002-B2 |
| Application number | US-75730204-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 14, 2004 |
| Priority date | Jan 14, 2004 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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An infinitely variable physical vapor deposition matrix system that allows the synthesis of multiple combinatorial catalyst samples at essentially the same time, by the co-deposition of multiple materials, or the sequential layer by layer deposition of multiple catalyst constituents, or both, such that the optimum mix of materials for a pre-determined application can be experimentally determined in subsequent testing. The discovery of optimal catalyst combinations for utilization in specified reactions and devices is facilitated. The high throughput system reduces the time and complexity of processing typically required to formulate and test combinatorial catalyst materials.
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What is claimed is: 1. A physical vapor deposition system for depositing combinatorial catalyst samples on a plurality of substrate target areas comprising: (a) a deposition chamber that when open, receives one or more substrates and is sealable after the one or more substrates are loaded therein, the chamber being openable after the one or more substrates have been is processed so that the one or more substrates with can be removed therefrom; (b) a plurality of plasma sources r…
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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