Semiconductor light-emitting element and flash-light device

US8941335B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8941335-B2
Application numberUS-201213483416-A
CountryUS
Kind codeB2
Filing dateMay 30, 2012
Priority dateJun 1, 2011
Publication dateJan 27, 2015
Grant dateJan 27, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

There is provided a light-emitting element which includes a first semiconductor layer, a second semiconductor layer having an electrical conductivity that is different from that of the first semiconductor layer and an active layer disposed between the first and second layers, and a first and second electrodes respectively disposed on surfaces of the first and second semiconductor layers. The first electrode comprises a plurality of electrode pieces separated from each other; and each of the electrode pieces comprises a power feed pad, and an extended portion connected to the pad and that extends in a direction away from the pad, and a terminal end portion of the extended portion of an electrode piece is opposed to a terminal end portion of the extended portion of the other electrode piece across a gap.

First claim

Opening claim text (preview).

What is claimed is: 1. A flash light device provided with a semiconductor light-emitting element, the semiconductor light-emitting element comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity that is different from said first electrical conductivity, an active layer disposed between said first semiconductor layer and said second semiconductor layer, and a first electrode and a second elec…

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What does patent US8941335B2 cover?
There is provided a light-emitting element which includes a first semiconductor layer, a second semiconductor layer having an electrical conductivity that is different from that of the first semiconductor layer and an active layer disposed between the first and second layers, and a first and second electrodes respectively disposed on surfaces of the first and second semiconductor layers. The fi…
Who is the assignee on this patent?
Kono Keima, Takashiro Eiji, Saito Tatsuma, and 2 more
What technology area does this patent fall under?
Primary CPC classification H10H20/831. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).