Electrophotographic deposition of unpackaged semiconductor device
US-2015357526-A1 · Dec 10, 2015 · US
US8941299B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8941299-B2 |
| Application number | US-75082407-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 18, 2007 |
| Priority date | May 21, 2006 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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A light emitting device includes an electroluminescent material and semiconductor nanocrystals. The semiconductor nanocrystals accept energy from the electroluminescent material and emit light.
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What is claimed is: 1. A voltage-driven light emitting device comprising: a first electrode; a second electrode; an electroluminescent material including a wide band gap inorganic material; an insulating dielectric material disposed between the electroluminescent material and the first electrode, wherein the insulating dielectric material prevents current from passing between electroluminescent material and the first electrode; an insulating dielectric material disposed be…
Electricity · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
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