Apparatus for bi-directional power switching in low voltage vehicle power distribution systems

US8941264B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8941264-B2
Application numberUS-201113134901-A
CountryUS
Kind codeB2
Filing dateJun 20, 2011
Priority dateJun 20, 2011
Publication dateJan 27, 2015
Grant dateJan 27, 2015

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Abstract

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A plurality of modules each including at least a pair of series connected power MOSFETs are configured between a plurality of DC voltage sources, and a plurality output terminals for connection to respective loads, are controlled for selectively applying power to the loads via time delay switching incorporating forward biased intrinsic diodes of the MOSFETs in a given current path during initial application of power to a load, whereby a predetermined period of time after turning on one of the series connected MOSFETs, the associated other MOSFET is turned on to shunt its intrinsic diode for reducing the resistance in the current path to maximize current flow. The configuration of the plurality of power MOSFETs is also controlled for selectively providing bi-directional current flow between said plurality of DC voltage sources.

First claim

Opening claim text (preview).

What is claimed is: 1. A low voltage high current DC power distribution system comprising: a first DC voltage source being a primary battery; a second DC voltage source being a secondary battery; switching means connected between said primary and secondary batteries; controller means operable in a first mode in response to said primary battery voltage level being greater then said secondary battery voltage level, for controlling said switching means to allow said primary bat…

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What does patent US8941264B2 cover?
A plurality of modules each including at least a pair of series connected power MOSFETs are configured between a plurality of DC voltage sources, and a plurality output terminals for connection to respective loads, are controlled for selectively applying power to the loads via time delay switching incorporating forward biased intrinsic diodes of the MOSFETs in a given current path during initia…
Who is the assignee on this patent?
Scruggs Michael K, Sozusen Serdar T, Bae Sys Inf & Elect Sys Integ
What technology area does this patent fall under?
Primary CPC classification H02J1/10. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).