Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
Semiconductor device and method of manufacturing the same
US8941241B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8941241-B2 |
| Application number | US-201213585240-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 14, 2012 |
| Priority date | Sep 6, 2011 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A semiconductor device includes at least 4 conductive line groups arranged in parallel over one memory cell block and each configured to include conductive lines. First contact pads may be coupled to the respective ends of the conductive lines of two of the 4 conductive line groups in a first direction, and second contact pads may be coupled to the respective ends of the conductive lines of the remaining 2 of the 4 conductive line groups in a second direction opposite to the first direction.
First claim
Opening claim text (preview).
What is claimed: 1. A semiconductor device, comprising: first to fourth conductive line groups arranged in parallel over one memory cell block and each configured to include conductive lines; first contact pads coupled to respective ends of the conductive lines of the first and third conductive line groups in a first direction; and second contact pads coupled to respective ends of the conductive lines of the second and fourth conductive line groups in a second direction opposi…
Assignees
Inventors
Classifications
- H10P76/4085Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P76/4088Primary
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8941241B2 cover?
- A semiconductor device includes at least 4 conductive line groups arranged in parallel over one memory cell block and each configured to include conductive lines. First contact pads may be coupled to the respective ends of the conductive lines of two of the 4 conductive line groups in a first direction, and second contact pads may be coupled to the respective ends of the conductive lines of the…
- Who is the assignee on this patent?
- Eom Dae Sung, Sk Hynix Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P76/4085. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).