Nanoscale Interconnects Fabricated by Electrical Field Directed Assembly of Nanoelements
US-2015371900-A1 · Dec 24, 2015 · US
Fabricating a contact rhodium structure by electroplating and electroplating composition
US8941240B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8941240-B2 |
| Application number | US-201213564414-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 1, 2012 |
| Priority date | Apr 20, 2007 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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Abstract
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A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and depositing the rhodium by electroplating from a bath comprising a rhodium salt; an acid and a stress reducer; and then optionally annealing the structure.
First claim
Opening claim text (preview).
What is claimed is: 1. A contact rhodium structure comprising a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein, wherein cavities having an aspect ratio of about 4 to about 10 are filled with electroplated rhodium that is substantially free of internal seams or voids, and wherein the electroplated rhodium has a resistivity between about 5 micro-ohm-cm to about 20 micro-ohm-cm when annealed above 190° C. 2. The struc…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10W20/4432Primary
Electricity · mapped topic
- H10P14/46Primary
Electricity · mapped topic
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- What does patent US8941240B2 cover?
- A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and depositing the rhodium by electroplating from a bath comprising a rhodium salt; an acid and a st…
- Who is the assignee on this patent?
- Deligianni Hariklia, Shao Xiaoyan, IBM
- What technology area does this patent fall under?
- Primary CPC classification H10W20/4432. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).