Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
Semiconductor device having a through contact
US8941217B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8941217-B2 |
| Application number | US-201414249642-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 10, 2014 |
| Priority date | Oct 24, 2011 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A semiconductor device includes a semiconductor substrate having a first side and a second side opposite the first side, an active area and a through contact area, the active area including a transistor structure having a control electrode, the through contact area including a semiconductor mesa having insulated sidewalls. The semiconductor device further includes a first metallization on the first side in the active area and a recess extending from the first side into the semiconductor substrate and between the active area and the through contact area and including in the through contact area a horizontally widening portion, the recess being at least partly filled with a conductive material forming a first conductive region in ohmic contact with the semiconductor mesa and the transistor structure. The semiconductor device also includes a control metallization on the second side and in ohmic contact with the semiconductor mesa.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a semiconductor substrate comprising a first side and a second side opposite the first side, an active area and a through contact area, the active area comprising a transistor structure having a control electrode, the through contact area comprising a semiconductor mesa having insulated sidewalls; a first metallization on the first side in the active area; a recess extending from the first side into the semiconductor s…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8941217B2 cover?
- A semiconductor device includes a semiconductor substrate having a first side and a second side opposite the first side, an active area and a through contact area, the active area including a transistor structure having a control electrode, the through contact area including a semiconductor mesa having insulated sidewalls. The semiconductor device further includes a first metallization on the f…
- Who is the assignee on this patent?
- Infineon Technologies Ag
- What technology area does this patent fall under?
- Primary CPC classification H10W20/20. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).