Semiconductor device including a diode and method of manufacturing a semiconductor device

US8941206B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8941206-B2
Application numberUS-201213556261-A
CountryUS
Kind codeB2
Filing dateJul 24, 2012
Priority dateJul 24, 2012
Publication dateJan 27, 2015
Grant dateJan 27, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A semiconductor device includes a transistor cell array in the semiconductor body of a first conductivity type. The semiconductor device further includes a first trench in the transistor cell array between transistor cells. The first trench extends into the semiconductor body from a first side and includes a pn junction diode electrically coupled to the semiconductor body at a sidewall.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor device, comprising: a transistor cell area in a semiconductor body of a first conductivity type; a first trench in the transistor cell area between transistor cells, wherein the first trench extends into the semiconductor body from a first side and includes a pn junction diode electrically coupled to the semiconductor body at a sidewall. 2. The semiconductor device of claim 1 , wherein the first trench includes a fi…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US8941206B2 cover?
A semiconductor device includes a transistor cell array in the semiconductor body of a first conductivity type. The semiconductor device further includes a first trench in the transistor cell array between transistor cells. The first trench extends into the semiconductor body from a first side and includes a pn junction diode electrically coupled to the semiconductor body at a sidewall.
Who is the assignee on this patent?
Meyer Thorsten, Meiser Andreas, Infineon Technologies Ag
What technology area does this patent fall under?
Primary CPC classification H10D30/63. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).