Apparatus and electronic devices including transistors comprising two-dimensional materials
US-2024339543-A1 · Oct 10, 2024 · US
US8941206B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8941206-B2 |
| Application number | US-201213556261-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 24, 2012 |
| Priority date | Jul 24, 2012 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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A semiconductor device includes a transistor cell array in the semiconductor body of a first conductivity type. The semiconductor device further includes a first trench in the transistor cell array between transistor cells. The first trench extends into the semiconductor body from a first side and includes a pn junction diode electrically coupled to the semiconductor body at a sidewall.
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a transistor cell area in a semiconductor body of a first conductivity type; a first trench in the transistor cell area between transistor cells, wherein the first trench extends into the semiconductor body from a first side and includes a pn junction diode electrically coupled to the semiconductor body at a sidewall. 2. The semiconductor device of claim 1 , wherein the first trench includes a fi…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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