Image sensor and manufacturing process thereof
US-2024347559-A1 · Oct 17, 2024 · US
US8941202B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8941202-B2 |
| Application number | US-201314019333-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 5, 2013 |
| Priority date | Jun 4, 2010 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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A method for forming an image sensor device is provided. First, a lens is provided and a first sacrificial element is formed thereon. An electromagnetic interference layer is formed on the lens and the first sacrificial element, and the first sacrificial element and electromagnetic interference layer thereon are removed to form an electromagnetic interference pattern having an opening exposing a selected portion of the lens. A second sacrificial element is formed in the opening to cover a center region of the selected portion of the lens. A peripheral region of the selected portion of the lens remains exposed. A light-shielding layer is formed on the electromagnetic interference pattern, second sacrificial element, and peripheral region of the selected portion of the lens. The second sacrificial element and light-shielding pattern are removed to expose the center region of the selected portion of the lens as a light transmitting region.
Opening claim text (preview).
What is claimed is: 1. An image sensor device, comprising: a photo sensor having a lens thereon; an electromagnetic interference pattern on the lens, wherein the electromagnetic interference pattern has an opening exposing a portion of the lens, said opening defined by an inner sidewall of said electromagnetic interference pattern; a light-shielding pattern abutting and covering a top surface and said inner sidewall of said electromagnetic interference pattern of the electroma…
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