Image sensor
US-12094907-B2 · Sep 17, 2024 · US
US8941198B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8941198-B2 |
| Application number | US-201213370412-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 10, 2012 |
| Priority date | Feb 25, 2011 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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A solid-state imaging device includes a plurality of photoelectric conversion portions each provided in a semiconductor substrate and receives incident light through a light sensing surface, and a pixel separation portion provided to electrically separate a plurality of pixels. At least a pinning layer and a light shielding layer are provided in an inner portion of a trench provided on a side portion of each of the photoelectric conversion portions in an incident surface side, the trench includes a first trench and a second trench formed to be wider than the first trench in a portion shallower than the first trench, the pinning layer is formed in an inner portion of the first trench to cover an inside surface of the second trench, and the light shielding layer is formed to bury an inner portion of the second trench at least via the pinning layer.
Opening claim text (preview).
What is claimed is: 1. A solid-state imaging device comprising: a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receives incident light through a light sensing surface; and a pixel separation portion that is provided between the plurality of pixels in an inner portion of the semiconductor substrate and electrically separates the plurality of pixels, wherein an impurity region is provid…
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