Precessional reversal in orthogonal spin transfer magnetic RAM devices

Patent metadata

Field	Value
Publication number	US-8941196-B2
Application number	US-201313935274-A
Country	US
Kind code	B2
Filing date	Jul 3, 2013
Priority date	Jul 10, 2012
Publication date	Jan 27, 2015
Grant date	Jan 27, 2015

Abstract

Orthogonal spin-torque bit cells whose spin torques from a perpendicular polarizer and an in-plane magnetized reference layer are constructively or destructively combined. An orthogonal spin-torque bit cell includes a perpendicular magnetized polarizing layer configured to provide a first spin-torque; an in-plane magnetized free layer and a reference layer configured to provide a second spin-torque. The first spin-torque and the second spin-torque combine and the combined first spin-torque and second spin-torque influences the magnetic state of the in-plane magnetized free layer. The in-plane magnetized free layer and the reference layer form a magnetic tunnel junction. The first spin-torque and second spin-torque can combine constructively to lower a switching current, increase a switching speed, and/or torque decrease an operating energy of the orthogonal spin-torque bit cell.

First claim

What is claimed is:

1. An orthogonal spin-torque bit cell, comprising:
a perpendicular magnetized polarizing layer having a magnetic vector, wherein the perpendicular magnetized polarizing layer provides a first spin-torque;
an in-plane magnetized free layer;
an element used to change the magnetic vector of the perpendicular magnetized polarizing layer to be magnetized up or down along an axis perpendicular to a plane of the perpendicular magnetized polarizing layer; and
a r…

Assignees

• Univ New York

Inventors

• Bedau Daniel
• Liu Huanlong
• Kent Andrew David

Classifications

• G11C11/16

  Physics · mapped topic

• H01L43/02 Primary

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H10N50/10 Primary

  Electricity · mapped topic

• H10N50/80 Primary

  Electricity · mapped topic