Method of actuating an internally transduced pn-diode-based ultra high frequency micromechanical resonator

Patent metadata

Field	Value
Publication number	US-8941191-B2
Application number	US-201113193685-A
Country	US
Kind code	B2
Filing date	Jul 29, 2011
Priority date	Jul 30, 2010
Publication date	Jan 27, 2015
Grant date	Jan 27, 2015

Abstract

A radio frequency microelectromechanical (RF MEMS) device can comprise an actuation p-n junction and a sensing p-n junction formed within a semiconductor substrate. The RF MEMS device can be configured to operate in a mode in which an excitation voltage is applied across the actuation p-n junction varying a non-mobile charge within the actuation p-n junction to modulate an electric field acting upon dopant ions and creating electrostatic forces. The electrostatic forces can create a mechanical motion within the actuation p-n junction. The mechanical motion can modulate a depletion capacitance of the sensing p-n junction, thereby creating a motional current. At least one of the p-n junctions can be located at an optimal location to maximize the efficiency of the RF MEMS device at high resonant frequencies.

First claim

The invention claimed is:

1. A method, comprising:
providing a radio frequency microelectromechanical (RF MEMS) device, the device comprising a semiconductor substrate;
an actuation p-n junction and a sensing p-n junction, each located within the semiconductor substrate at a point of minimum displacement with respect to a mechanical mode shape; and
actuating the actuation p-n junction at a resonant frequency, the actuating causing a mechanical motion in the actuation p-n junct…

Assignees

• Hwang Eugene
• Bhave Sunil Ashok
• Univ Cornell

Inventors

• Hwang Eugene
• Bhave Sunil Ashok

Classifications

• H03H3/0072

  Electricity · mapped topic

• H03H2009/02496

  Electricity · mapped topic

• H03H9/2405 Primary

  Electricity · mapped topic