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Semiconductor light emitting device and method for manufacturing same
US8941124B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8941124-B2 |
| Application number | US-201313968881-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 16, 2013 |
| Priority date | Mar 15, 2011 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, and an inorganic film. The semiconductor layer includes a first surface having an unevenness, a second surface opposite to the first surface, and a light emitting layer. The semiconductor layer includes gallium nitride. The inorganic film is provided to conform to the unevenness of the first surface and in contact with the first surface. The inorganic film has main components of silicon and nitrogen. The inorganic film has a refractive index between a refractive index of the gallium nitride and a refractive index of air. An unevenness is formed also in a surface of the inorganic film.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor light emitting device, comprising: a semiconductor layer including a first surface having an unevenness, a second surface opposite to the first surface, and a light emitting layer, the semiconductor layer including gallium nitride; a p-side electrode provided on the semiconductor layer; an n-side electrode provided on the semiconductor layer; an inorganic film provided to conform to the unevenness of the first surface and in contact wit…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10H20/84Primary
Electricity · mapped topic
- H10H20/825Primary
Electricity · mapped topic
- H10H20/85Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8941124B2 cover?
- According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, and an inorganic film. The semiconductor layer includes a first surface having an unevenness, a second surface opposite to the first surface, and a light emitting layer. The semiconductor layer includes gallium nitride. The inorganic film is provided to con…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10H20/84. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).