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Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device
US8941121B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8941121-B2 |
| Application number | US-201313736432-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 8, 2013 |
| Priority date | Feb 13, 2012 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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Abstract
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A first region of a silicon carbide layer constitutes a first surface, and is of a first conductivity type. A second region is provided on the first region, and is of a second conductivity type. A third region is provided on the second region, and is of the first conductivity type. A fourth region is provided in the first region, located away from each of the first surface and the second region, and is of the second conductivity type. A gate insulation film is provided on the second region so as to connect the first region with the third region. A gate electrode is provided on the gate insulation film. A first electrode is provided beneath the first region. A second electrode is provided on the third region.
First claim
Opening claim text (preview).
What is claimed is: 1. A silicon carbide semiconductor device comprising: a silicon carbide layer having a first surface and a second surface opposite to each other in the thickness direction, said silicon carbide layer including a first region constituting said first surface and of a first conductivity type, a second region provided on said first region so as to be apart from said first surface by said first region, and of a second conductivity type differing from said first cond…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8941121B2 cover?
- A first region of a silicon carbide layer constitutes a first surface, and is of a first conductivity type. A second region is provided on the first region, and is of a second conductivity type. A third region is provided on the second region, and is of the first conductivity type. A fourth region is provided in the first region, located away from each of the first surface and the second region…
- Who is the assignee on this patent?
- Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification H10D30/66. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).