Non-crystalline inorganic light emitting diode

Patent metadata

Field	Value
Publication number	US-8941111-B2
Application number	US-201213725923-A
Country	US
Kind code	B2
Filing date	Dec 21, 2012
Priority date	Dec 21, 2012
Publication date	Jan 27, 2015
Grant date	Jan 27, 2015

Abstract

Non-crystalline inorganic light emitting diode. In accordance with a first embodiment of the present invention, an article of manufacture includes a light emitting diode. The light emitting diode includes a non-crystalline inorganic light emission layer and first and second semiconducting non-crystalline inorganic charge transport layers surrounding the light emission layer. The light emission layer may be amorphous. The charge transport layers may be configured to inject one type of charge carrier and block the other type of charge carrier.

First claim

What is claimed is:

1. An article of manufacture comprising:
a light emitting device comprising:
a first diode unit comprising:
a first non-crystalline inorganic light emission layer configured to
emit light of a first wavelength;
first and second non-crystalline inorganic charge transport layers surrounding said first light emission layer;

a second diode unit comprising:
a second non-crystalline inorganic light emission layer configured to emit light of a second wavele…

Assignees

• Invensas Corp

Inventors

• Mohammed Ilyas
• Wang Liang

Classifications

• H05B33/22

  Electricity · mapped topic

• H05B33/14

  Electricity · mapped topic

• H10H20/036

  Electricity · mapped topic

• H10H20/032

  Electricity · mapped topic

• H10H20/8506

  Electricity · mapped topic