Leakage pathway layer for solar cell
US-9202960-B2 · Dec 1, 2015 · US
Solar cell element
US8941004B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8941004-B2 |
| Application number | US-201314068364-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 31, 2013 |
| Priority date | Jan 11, 2012 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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Abstract
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A solar cell element comprising a p-side electrode; a p-type group III-group V compound semiconductor layer; an n-type group III-group V compound semiconductor layer; an n-side group III-group V compound electrode layer; and a V x Zn 1-x layer. The p-side electrode is electrically connected to the p-type group III-group V compound semiconductor layer. The p-type group III-group V compound semiconductor layer, the n-type group III-group V compound semiconductor layer, the n-side group III-group V compound electrode layer, and the V x Zn 1-x layer are stacked in this order. The V x Zn 1-x layer is in contact with the n-side group III-group V compound electrode layer; x represents a value of not less than 0.3 and not more than 0.99; and the V x Zn 1-x layer has a thickness of not less than 1 nanometer and not more than 5 nanometers.
First claim
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The invention claimed is: 1. A solar cell element comprising: a p-side electrode; a p-type group III-group V compound semiconductor layer; an n-type group III-group V compound semiconductor layer; an n-side group III-group V compound electrode layer; and a V x Zn 1-x layer; wherein the p-side electrode is electrically connected to the p-type group III-group V compound semiconductor layer; the p-type group III-group V compound semiconductor layer, the n-type group III-…
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Cross-Sectional Technologies · mapped topic
Mechanical Engineering · mapped topic
Cross-Sectional Technologies · mapped topic
Cross-Sectional Technologies · mapped topic
- H10F77/935Primary
Electricity · mapped topic
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- What does patent US8941004B2 cover?
- A solar cell element comprising a p-side electrode; a p-type group III-group V compound semiconductor layer; an n-type group III-group V compound semiconductor layer; an n-side group III-group V compound electrode layer; and a V x Zn 1-x layer. The p-side electrode is electrically connected to the p-type group III-group V compound semiconductor layer. The p-type group III-group V compound semi…
- Who is the assignee on this patent?
- Panasonic Corp, Panasonic Ip Man Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10F77/935. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).