Conductive structure body precursor, conductive structure body and method for manufacturing the same
US-2015370359-A1 · Dec 24, 2015 · US
US8941002B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8941002-B2 |
| Application number | US-201113520640-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 7, 2011 |
| Priority date | Jan 25, 2010 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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Provided are an oxide tablet for vapor deposition (oxide evaporation material), and a vapor-deposited thin film and a solar cell formed using the same. The tablet comprises a sintered body which contains indium oxide as a main component and cerium and which is subjected to no surface grinding after sintering, in which Comp S /Comp A =0.9 to 1.1, where the content of cerium in a surface layer to a depth of 5 μm from a surface of the sintered body is represented by a Ce/In atomic ratio (Comp S ), and an average value of the content of cerium in the entire sintered body is represented by a Ce/In atomic ratio (Comp A ).
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The invention claimed is: 1. An oxide evaporation material comprising a sintered body which contains indium oxide as a main component and cerium and which is subjected to no surface grinding after sintering, wherein Comp S /Comp A =0.9 to 1.1, where the content of cerium in a surface layer to a depth of 5 μm from a surface of the sintered body is represented by a Ce/In atomic ratio (Comp S ), and an average value of the content of cerium in the entire sintered body is re…
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