Thermoelectric device and method for fabricating the same

US8940995B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8940995-B2
Application numberUS-63240309-A
CountryUS
Kind codeB2
Filing dateDec 7, 2009
Priority dateJul 6, 2009
Publication dateJan 27, 2015
Grant dateJan 27, 2015

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  2. Abstract

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  5. First independent claim

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Abstract

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A thermoelectric device is provided. The thermoelectric device includes first and second electrodes, a first leg, a second leg, and a common electrode. The first leg is disposed on the first electrode and includes one or more first semiconductor pattern and one or more first barrier patterns. The second leg is disposed on the second electrode and includes one or more second semiconductor pattern and one or more second barrier patterns. The common electrode is disposed on the first leg and the second leg. Herein, the first barrier pattern has a lower thermal conductivity than the first semiconductor pattern, and the second barrier pattern has a lower thermal conductivity than the second semiconductor pattern. The first/second barrier pattern has a higher electric conductivity than the first/second semiconductor pattern. The first/second barrier pattern forms an ohmic contact with the first/second semiconductor pattern.

First claim

Opening claim text (preview).

What is claimed is: 1. A thermoelectric device comprising: first and second electrodes; a first leg coupled to the first electrode and including two or more first semiconductor patterns and one or more first barrier patterns; a second leg coupled to the second electrode and including two or more second semiconductor patterns and one or more second barrier patterns; and a common electrode coupled to the first leg and the second leg, wherein the first barrier pattern has a l…

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What does patent US8940995B2 cover?
A thermoelectric device is provided. The thermoelectric device includes first and second electrodes, a first leg, a second leg, and a common electrode. The first leg is disposed on the first electrode and includes one or more first semiconductor pattern and one or more first barrier patterns. The second leg is disposed on the second electrode and includes one or more second semiconductor patter…
Who is the assignee on this patent?
Park Young-Sam, Jang Moon-Gyu, Zyung Taehyoung, and 3 more
What technology area does this patent fall under?
Primary CPC classification H01L35/32. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).