Method of manufacturing interconnection and semiconductor device

Patent metadata

Field	Value
Publication number	US-8940628-B2
Application number	US-201314140731-A
Country	US
Kind code	B2
Filing date	Dec 26, 2013
Priority date	Dec 27, 2012
Publication date	Jan 27, 2015
Grant date	Jan 27, 2015

Abstract

A method of manufacturing an interconnection of an embodiment includes: forming a via which penetrates an interlayer insulation film on a substrate; forming an underlying film in the via; removing the underlying film on a bottom part of the via; forming a catalyst metal inactivation film on the underlying film; removing the inactivation film on the bottom part of the via; forming a catalyst metal film on the bottom part of the via on which the inactivation film is removed; performing a first plasma treatment and a second plasma treatment using a gas not containing carbon on a member in which the catalyst metal film is formed; forming a graphite layer on the catalyst film after the first and second plasma treatment processes; and causing a growth of a carbon nanotube from the catalyst film on which the graphite layer is formed.

First claim

What is claimed is:

1. A method of manufacturing an interconnection, the method comprising:
forming a via which penetrates an interlayer insulation film on a substrate;
forming an underlying film in the via;
removing the underlying film on a bottom part of the via;
forming a catalyst metal inactivation film on the underlying film;
removing the catalyst metal inactivation film on the bottom part of the via;
forming a catalyst metal film on the bottom part of the via on which the catalyst metal inactivation film is removed;
performing a first plasma treatment and a second plasma treatment using a gas not containing carbon on a member in which the catalyst metal film is formed;
forming a graphite layer on the catalyst metal film after the first and second plasma treatment processes; and
causing a growth of a carbon nanotube from the catalyst metal film on which the graphite layer is formed,
wherein a plasma gas pressure of the first plasma treatment is higher than that of the second plasma treatment.

2. The method according to claim 1 , wherein the gas pressure of the first plasma treatment is 133.3 Pa or more and 101325 Pa or less.

3. The method according to claim 1 , wherein the gas pressure of the second plasma treatment is 0.1333 Pa or more and 13.33 Pa or less.

4. The method according to claim 1 , wherein the gas pressure of the first plasma treatment is ten or more times the gas pressure of the second plasma treatment.

5. The method according to claim 1 , wherein a treatment temperature of the first plasma treatment is lower than that of the second plasma treatment.

6. The method according to claim 1 , wherein a treatment temperature of the first plasma treatment is 25° C. or higher and 400° C. or lower.

7. The method according to claim 1 , wherein a treatment temperature of the second plasma treatment is 150° C. or higher and 600° C. or lower.

8. The method according to claim 1 , wherein the gas not containing the carbon of the first plasma treatment contains at least one selected from the group consisting of H 2 , He, N 2 , NH 3 , O 2 , and Ar.

9. The method according to claim 1 , wherein the gas not containing the carbon of the second plasma treatment contains at least one selected from the group consisting of H 2 , He, ArN 2 , and NH 3 .

10. The method according to claim 1 , wherein one or both of the first plasma treatment and the second plasma treatment are performed plural times.

11. The method according to claim 10 , wherein the plasma treatment is performed with a plasma gas containing different active species when being performed plural times.

12. The method according to claim 1 , wherein the first plasma treatment is performed such that plasma gas does not reach the bottom part of the via.

13. The method according to claim 1 , wherein the second plasma treatment is performed such that plasma gas reaches the bottom part of the via.

14. The method according to claim 1 , wherein a density of the carbon nanotube is 1×10 11 or more.

15. A method of manufacturing a semiconductor device, the method comprising:
forming a via which penetrates an interlayer insulation film on a substrate;
forming an underlying film in the via;
removing the underlying film on a bottom part of the via;
forming a catalyst metal inactivation film on the underlying film;
removing the catalyst metal inactivation film on the bottom part of the via;
forming a catalyst metal film on the bottom part of the via on which the catalyst metal inactivation film is removed;
performing a first plasma treatment and a second plasma treatment using a gas not containing carbon on a member in which the catalyst metal film is formed;
forming a graphite layer on the catalyst metal film after the first and second plasma treatment processes; and
causing a growth of a carbon nanotube from the catalyst metal film on which the graphite layer is formed,
wherein the method of manufacturing an interconnection of the semiconductor device employs a method of manufacturing an interconnection in which a plasma gas pressure of the first plasma treatment is higher than that of the second plasma treatment.

16. The method according to claim 15 , wherein the gas pressure of the first plasma treatment is 133.3 Pa or more and 101325 Pa or less.

17. The method according to claim 15 , wherein the gas pressure of the second plasma treatment is 0.1333 Pa or more and 13.33 Pa or less.

18. The method according to claim 15 , wherein the gas pressure of the first plasma treatment is ten or more times the gas pressure of the second plasma treatment.

19. The method according to claim 15 , wherein a treatment temperature of the first plasma treatment is lower than that of the second plasma treatment.

20. The method according to claim 15 , wherein a treatment temperature of the first plasma treatment is 25° C. or higher and 400° C. or lower.

21. The method according to claim 15 , wherein a treatment temperature of the second plasma treatment is 150° C. or higher and 600° C. or lower.

22. The method according to claim 15 , wherein the gas not containing the carbon of the first plasma treatment contains at least one selected from the group consisting of H 2 , He, N 2 , NH 3 , O 2 , and Ar.

23. The method according to claim 15 , wherein the gas not containing the carbon of the second plasma treatment contains at least one selected from the group consisting of H 2 , He, ArN 2 , and NH 3 .

24. The method according to claim 15 , wherein one or both of the first plasma treatment and the second plasma treatment are performed plural times.

25. The method according to claim 24 , wherein the plasma treatment is performed with a plasma gas containing different active species when being performed plural times.

26. The method according to claim 15 , wherein the first plasma treatment is performed such that plasma gas does not reach the bottom part of the via.

27. The method according to claim 15 , wherein the second plasma treatment is performed such that plasma gas reaches the bottom part of the via.

28. The method according to claim 15 , wherein a density of the carbon nanotube is 1×10 11 or more.

Assignees

• Toshiba Kk

Inventors

• Yamazaki Yuichi
• Sakai Tadashi

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/0554

  of nanotubes or nanowires · CPC title

• H10W20/4462

  Carbon or carbon-containing materials, e.g. graphene · CPC title

• H10W20/0523

  by irradiating with ultraviolet or particle radiation · CPC title