Semiconductor devices and methods for manufacturing the same
US-2015325703-A1 · Nov 12, 2015 · US
MOS device and method of manufacturing the same
US8940609B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8940609-B2 |
| Application number | US-201414307973-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 18, 2014 |
| Priority date | Sep 2, 2011 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor device and method of forming the semiconductor device are disclosed, where the semiconductor device includes additional implant regions in the source and drain areas of the device for improving Ron-sp and BVD characteristics of the device. The device includes a gate electrode formed over a channel region that separates first and second implant regions in the device substrate. The first implant region has a first conductivity type, and the second implant region has a second conductivity type. A source diffusion region is formed in the first implant region, and a drain diffusion region is formed in the second implant region.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a semiconductor device comprising: forming a well of a first conductivity type formed in a substrate; forming a gate electrode over the well; forming a first implant region in the well that extends from below the gate electrode, the first implant region having the first conductivity type; forming a second implant region in the well that extends from below the gate electrode, the second implant region having a second conductivi…
Assignees
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Classifications
- H10P30/222Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8940609B2 cover?
- A semiconductor device and method of forming the semiconductor device are disclosed, where the semiconductor device includes additional implant regions in the source and drain areas of the device for improving Ron-sp and BVD characteristics of the device. The device includes a gate electrode formed over a channel region that separates first and second implant regions in the device substrate. Th…
- Who is the assignee on this patent?
- Macronix Int Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P30/222. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).