Semiconductor device and processes for making same
US-2024290783-A1 · Aug 29, 2024 · US
Self-aligned structure for bulk FinFET
US8940602B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8940602-B2 |
| Application number | US-201313860832-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 11, 2013 |
| Priority date | Apr 11, 2013 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A FinFET structure which includes a bulk semiconductor substrate; semiconductor fins extending from the bulk semiconductor substrate, each of the semiconductor fins having a top portion and a bottom portion such that the bottom portion of the semiconductor fins is doped and the top portion of the semiconductor fins is undoped; a portion of the bulk semiconductor substrate directly underneath the plurality of semiconductor fins being doped to form an n+ or p+ well; and an oxide formed between the bottom portions of the fins. Also disclosed is a method for forming a FinFET device.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a FinFET device comprising, in the following order: forming a plurality of semiconductor fins from a bulk semiconductor substrate; forming an oxide layer between each of the plurality of semiconductor fins, the oxide layer extending from the bulk semiconductor substrate only part way up a sidewall of each of the semiconductor fins to cover a bottom portion of each of the semiconductor fins, a top portion of the sidewall of each of the s…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10W10/011Primary
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8940602B2 cover?
- A FinFET structure which includes a bulk semiconductor substrate; semiconductor fins extending from the bulk semiconductor substrate, each of the semiconductor fins having a top portion and a bottom portion such that the bottom portion of the semiconductor fins is doped and the top portion of the semiconductor fins is undoped; a portion of the bulk semiconductor substrate directly underneath th…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10W10/011. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).