Enhancement-mode GaN MOSFET with low leakage current and improved reliability

Patent metadata

Field	Value
Publication number	US-8940593-B2
Application number	US-201314091606-A
Country	US
Kind code	B2
Filing date	Nov 27, 2013
Priority date	Jan 30, 2010
Publication date	Jan 27, 2015
Grant date	Jan 27, 2015

Abstract

An enhancement-mode GaN MOSFET with a low leakage current and an improved reliability is formed by utilizing a SiO 2 /Si 3 N 4 gate insulation layer on an AlGaN (or InAlGaN) barrier layer. The Si 3 N 4 portion of the SiO 2 /Si 3 N 4 gate insulation layer significantly reduces the formation of interface states at the junction between the gate insulation layer and the barrier layer, while the SiO 2 portion of the SiO 2 /Si 3 N 4 gate insulation layer significantly reduces the leakage current.

First claim

What is claimed is:

1. A method of forming a transistor comprising:
Forming a channel layer including GaN;
forming a barrier layer, the barrier layer including AlGaN;
forming a lower transition layer touching the barrier layer forming a layer of Si 3 N 4 that touches the lower transition layer on the lower side of the Si 3 N 4 , wherein the Si 3 N 4 layer and the barrier layer share anions to produce the lower transition layer;
an upper transition layer touching the Si 3 N…

Assignees

• Nat Semiconductor Corp
• Texas Instruments Inc

Inventors

• Ramdani Jamal

Classifications

• H10P14/3416

  Electricity · mapped topic

• H10P14/3216

  Electricity · mapped topic

• H10D64/01358 Primary

  Electricity · mapped topic

• H10D64/693

  Electricity · mapped topic

• H10D62/8503

  Electricity · mapped topic