Semiconductor device
US-2024290673-A1 · Aug 29, 2024 · US
US8940583B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8940583-B2 |
| Application number | US-85673010-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 16, 2010 |
| Priority date | Jun 7, 2002 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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Official abstract text for this publication.
In a semiconductor device, a lead frame made of a copper alloy prevents exfoliation occurring near the surface of the lead frame. A copper oxide layer is formed on the base material made of a copper alloy by immersing the base material into a solution of a strong oxidizer. The copper oxide layer serves as an outermost layer and consists of a copper oxide other than a copper oxide in the form of needle crystals.
Opening claim text (preview).
What is claimed is: 1. A manufacturing method of a lead frame, comprising: configuring a base material made of a copper alloy into a first pattern; applying plating to a part of the base material; and forming a copper oxide layer as an outermost layer on a surface of the base material by immersing the base material into a solution of a strong oxidizer, the copper oxide layer including a copper oxide other than a copper oxide in the form of needle crystals and thickness of the…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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