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Method of manufacturing semiconductor light-receiving element
US8940573B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8940573-B2 |
| Application number | US-201313838241-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 15, 2013 |
| Priority date | Mar 22, 2012 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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Abstract
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A method of manufacturing a semiconductor light-receiving element includes: forming a semiconductor layer structure having a one-conductivity-type semiconductor layer having a first conduction type located on a side of light incidence, an opposite-conductivity-type semiconductor layer having a second conduction type opposite to the first conduction type, and a light-absorbing layer between the one-conductivity-type semiconductor layer and the opposite-conductivity type semiconductor layer, the opposite-conductivity-type semiconductor layer having a structure in which a first semiconductor layer comprised of a binary mixed crystal, a second semiconductor layer comprised of a three-or-more-element mixed crystal, and a third semiconductor layer comprised of a three-or-more-element mixed crystal having an energy gap smaller than that of the second semiconductor layer are laminated in this order from the light incidence side; forming a metal film that is in contact with the third semiconductor layer; and performing a thermal process after the forming of the metal film.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a semiconductor light-receiving element comprising: growing a one-conductivity-type semiconductor layer having a first conduction type, a light-absorbing layer and an opposite-conductivity type semiconductor layer having a second conduction type opposite to the first conduction type, in this order from a light incidence side; forming an insulating film on the opposite-conductivity-type semiconductor layer; forming a selective et…
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Classifications
Electricity · mapped topic
- H10F77/413Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8940573B2 cover?
- A method of manufacturing a semiconductor light-receiving element includes: forming a semiconductor layer structure having a one-conductivity-type semiconductor layer having a first conduction type located on a side of light incidence, an opposite-conductivity-type semiconductor layer having a second conduction type opposite to the first conduction type, and a light-absorbing layer between the …
- Who is the assignee on this patent?
- Sedi Inc
- What technology area does this patent fall under?
- Primary CPC classification H10F77/413. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).