Transversely-excited film bulk acoustic resonator with a back-side dielectric layer
US-2024396526-A1 · Nov 28, 2024 · US
US8940359B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8940359-B2 |
| Application number | US-201113223892-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 1, 2011 |
| Priority date | Sep 3, 2010 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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The microacoustic component has a substrate that has at least one layer (composed of a dielectric or piezoelectric material, and a metallic strip structure. The layer is composed of a dielectric or piezoelectric material and/or the metallic strip structure have/has been produced or can be produced by the atomic layer deposition method.
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What is claimed is: 1. A method for producing a microacoustic component, the method comprising: directly depositing a layer over a partially formed microacoustic component, the layer being deposited using an atomic layer deposition method as a series of self-passivating monolayers of uniform thickness, a number of self-passivating monolayers being chosen to obtain a thickness of the deposited layer that is chosen to effect a desired frequency accuracy of the microacoustic componen…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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